OFweek工控網(wǎng)訊“富士康已經(jīng)與印度馬哈拉施特拉邦政府簽署協(xié)議，將在未來5年內(nèi)投資50億美元建設(shè)電子制造工廠。
R88M-WP40030T-B據(jù)悉，此次交易由富士康創(chuàng)始人郭臺銘和馬哈拉施特拉邦首席部長德文德拉·法德納維斯共同簽署并宣布。郭臺銘表示，富士康正在當(dāng)?shù)貙ふ液献骰锇?。他拒絕透露，富士康是否將在這一工廠生產(chǎn)手機(jī)。
富士康的這一決定將是對印度總理莫迪“印度制造”戰(zhàn)略的支持。根據(jù)這一戰(zhàn)略，作為亞洲第三大經(jīng)濟(jì)體的印度將發(fā)展成為一個制造業(yè)大國。
此前，郭臺銘表示正考慮在印度多個邦建立制造工廠，并尋找潛在合作伙伴。印度可協(xié)助富士康緩解中國工資上漲的壓力。他曾預(yù)計，到2020年，富士康計劃在印度建設(shè)10到12處設(shè)施，包括工廠和數(shù)據(jù)中心。
R88M-WP40030T-B富士康是全球最大電子品代工商，客戶包括蘋果、黑莓、小米、亞馬遜等。通過在印度建設(shè)制造工廠，有助于富士康應(yīng)對中國工人工資上漲的壓力。目前，富士康的iPhone代工業(yè)務(wù)大部分位于中國。
富士康印度工廠
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2015中國機(jī)器人產(chǎn)業(yè)論壇武漢開幕美國密西根理工大學(xué)(Michigan Tech)透過結(jié)合石墨烯的高電子遷移率與氮化硼碳奈米管(BNNT)的絕緣層特性，期望開發(fā)出尺寸較矽(Si)更小且更具熱效能的無半導(dǎo)體(semiconductor-less)異質(zhì)接面電晶體，從而在國際半導(dǎo)體技術(shù)藍(lán)圖(ITRS)預(yù)期的2028年大限時接棒。
“我們對于這個研究主題的興趣在于打造完全不使用半導(dǎo)體的電子元件。盡管其他人正致于解決矽基電晶體的根本問題，我們則大膽地從探索不使用半導(dǎo)體的電路著手。由于石墨烯提供了高電子遷移率，將它應(yīng)用在數(shù)位交換器時，可帶來具有吸引力的研究里程碑，”密西根理工大學(xué)教授Yoke Khin Yap表示，“研究結(jié)果顯示在石墨烯上生長電子絕緣BNNT，可利用石墨烯帶來高效益的數(shù)位交換器?！?br />
R88M-WP40030T-B過去幾年來，石墨烯已經(jīng)成為各種先進(jìn)研究的主題，但大部份的研究都著重于其零能隙特性進(jìn)一步調(diào)整或加以摻雜，期望使其作為傳統(tǒng)半導(dǎo)體的替代材料。然而，密西根理工大學(xué)則保留石墨烯零能隙導(dǎo)體的特性，進(jìn)一步為其結(jié)合寬能隙的絕緣體BNNT，期望打造出一種矽晶無法超越的超高密度異質(zhì)接面結(jié)構(gòu)。
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